Study of Fast Neutron Irradiation Effects on GaN using Depth- resolved Cathodoluminescence Spectroscopy

نویسنده

  • Lei Raymond
چکیده

Gallium Nitride (GaN) is a radiation hard material that has unexplored potentials to be used as a neutron detector in harsh radiation environment. In this study, we will investigate the effects of radiation on semi-insulating (SI) and undoped GaN using depth-resolved cathodoluminescence spectroscopy (DRCLS) to measure the lattice defects due to neutron irradiation. The relationship between two main defects, termed “yellow line” (YL) and “blue line” (BL) band will be investigated with different annealing temperature to determine the evolution of the irradiation-induced defects in GaN. In addition to the specified goals to be achieved in this project, the research also aims to obtain preliminary data that could enhance proposals to meet high priority goals of several federal agencies.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Cathodoluminescence 2011

Book Published by Microanalysis Society http://www.microbeamanalysis.org/ ISBN# 978-0-7334-3069-5 Thank You to the Workshop Sponsors! Time Tuesday Program Chair Marion Stevens-Kalceff 8:15-8:30 Introduction & Welcome 8:30-9:15 Jens Gotze Application of cathodoluminescence microscopy and spectroscopy in geosciences 9:15-9:45 David Stowe Contrast mechanisms in cathodoluminescence microscopy 9:45-...

متن کامل

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation ...

متن کامل

Effects of low energy e-beam irradiation on cathodoluminescence from GaN

We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrate...

متن کامل

Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In_{0.05}Ga_{0.95}N Epilayer Grown on a Freestanding GaN Substrate

Spatio-time-resolved cathodoluminescence (STRCL) spectroscopy is implemented to assess the local carrier dynamics in a 70-nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In0:05Ga0:95N epilayer grown on a freestanding GaN substrate by metalorganic vapor phase epitaxy. Although TDs or stacking faults are absent, sub-micrometer-wide zonary patterns parallel to the c-ax...

متن کامل

AIR FORCE INSTITUTE OF TECHNOLOGY Wright-Patterson Air Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED ELECTRON PARAMAGNETIC RESONANCE SPECTROSCOPY AND HALL EFFECT STUDIES OF THE EFFECTS OF LOW ENERGY ELECTRON IRRADIATION ON GALLIUM NITRIDE (GAN)

Irradiation effects on the wide-bandgap semiconductor material GaN are of interest to the USAF due to this material’s applicability for a wide range of on-orbit uses. Irradiation is also a valuable tool in analyzing the damage and defect formation dynamics of the material which is of great use in determining and correcting deficiencies in material growth processes. GaN samples representing seve...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012